Optical and electrical characterization of thin films based on anthracene polyether polymers
Identifieur interne : 000801 ( Main/Repository ); précédent : 000800; suivant : 000802Optical and electrical characterization of thin films based on anthracene polyether polymers
Auteurs : RBID : Pascal:13-0188207Descripteurs français
- Pascal (Inist)
- Caractéristique électrique, Propriété optoélectronique, Electron pi, Caractéristique optique, Propriété optique, Spectre absorption, Spectre UV, Photoluminescence, Bande interdite, Lumière verte, Lumière jaune, Diode, Structure sandwich, Addition étain, Couche ITO, Propriété électrique, Caractéristique courant tension, Basse tension, Conduction limitée charge espace, Loi exponentielle, Piège, Couche mince, Anthracène, Ether polymère, Polymère conjugué, Dérivé de l'anthracène, Composé du fluor, Oxyde d'indium, Aluminium, Matériau dopé, 7867, 7840R, 8235C, 8105L, ITO, Modèle Cole Cole.
- Wicri :
- concept : Aluminium.
English descriptors
- KwdEn :
- Absorption spectra, Aluminium, Anthracene, Anthracene derivatives, Cole Cole model, Conjugated polymer, Diodes, Doped materials, Electrical characteristic, Electrical properties, Energy gap, Ether polymer, Exponential distribution, Fluorine compounds, Green light, ITO layers, IV characteristic, Indium oxide, Low voltage, Optical characteristic, Optical properties, Optoelectronic properties, Photoluminescence, Pi electron, Sandwich structures, Space-charge-limited conduction, Thin films, Tin additions, Traps, Ultraviolet spectra, Yellow light.
Abstract
Two new anthracene derivatives were characterized to improve the optoelectronic properties of π-conjugated anthracene polymers. The optical properties of the polymers were investigated by UV-visible absorption and photoluminescence (PL) spectroscopy. The energy bandgaps of anthracene-based polyether thin films were in the range 2.8-2.97 eV. Green emission (504 nm) was observed for anthracene/bisphenol A (An-BPA) and green-yellow emission (563 nm) for anthracene/fluorinated bisphenol A. (An-BPAF) Organic diodes formed by sandwiching anthracene layers between indium-tin oxide (ITO) and aluminum contacts were characterized. The dc electrical properties of ITO/anthracene derivatives/Al diodes were studied using current-voltage measurements and showed ohmic behavior at low voltage. The conduction mechanism seems to be a space-charge-limited current with exponential trap distribution at high applied bias voltage. The ac electrical transport of the anthracene derivatives was studied as a function of frequency (100 Hz-10 MHz) and applied bias in impedance spectroscopy analyses. We interpreted Cole-Cole plots in terms of the equivalent circuit model as a single parallel resistance and a capacitance network in series with a relatively small resistance. The evolution of the electrical parameters deduced from fitting of the experimental data is discussed. The conduction mechanism revealed by I-V characteristics is in agreement with the impedance spectroscopy results.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Optical and electrical characterization of thin films based on anthracene polyether polymers</title><author><name sortKey="Hrichi, Haikel" uniqKey="Hrichi H">Haikel Hrichi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire d'Interfaces et Matériaux Avancés (LIMA), Faculté des Sciences de Monastir, Bd de l'environnement</s1><s2>5019 Monastir</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>5019 Monastir</wicri:noRegion></affiliation></author><author><name sortKey="Hriz, Khaled" uniqKey="Hriz K">Khaled Hriz</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire d'Interfaces et Matériaux Avancés (LIMA), Faculté des Sciences de Monastir, Bd de l'environnement</s1><s2>5019 Monastir</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>5019 Monastir</wicri:noRegion></affiliation></author><author><name sortKey="Benzarti Ghedira, Maha" uniqKey="Benzarti Ghedira M">Maha Benzarti-Ghédira</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire d'Interfaces et Matériaux Avancés (LIMA), Faculté des Sciences de Monastir, Bd de l'environnement</s1><s2>5019 Monastir</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>5019 Monastir</wicri:noRegion></affiliation></author><author><name sortKey="Jaballah, Nejmeddine" uniqKey="Jaballah N">Nejmeddine Jaballah</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire d'Interfaces et Matériaux Avancés (LIMA), Faculté des Sciences de Monastir, Bd de l'environnement</s1><s2>5019 Monastir</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 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aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>5019 Monastir</wicri:noRegion></affiliation></author><author><name sortKey="Ben Ouada, Hafedh" uniqKey="Ben Ouada H">Hafedh Ben Ouada</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire d'Interfaces et Matériaux Avancés (LIMA), Faculté des Sciences de Monastir, Bd de l'environnement</s1><s2>5019 Monastir</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>5019 Monastir</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0188207</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0188207 INIST</idno><idno type="RBID">Pascal:13-0188207</idno><idno type="wicri:Area/Main/Corpus">000D53</idno><idno type="wicri:Area/Main/Repository">000801</idno></publicationStmt><seriesStmt><idno type="ISSN">1369-8001</idno><title level="j" type="abbreviated">Mater. sci. semicond. process.</title><title level="j" type="main">Materials science in semiconductor processing</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term><term>Aluminium</term><term>Anthracene</term><term>Anthracene derivatives</term><term>Cole Cole model</term><term>Conjugated polymer</term><term>Diodes</term><term>Doped materials</term><term>Electrical characteristic</term><term>Electrical properties</term><term>Energy gap</term><term>Ether polymer</term><term>Exponential distribution</term><term>Fluorine compounds</term><term>Green light</term><term>ITO layers</term><term>IV characteristic</term><term>Indium oxide</term><term>Low voltage</term><term>Optical characteristic</term><term>Optical properties</term><term>Optoelectronic properties</term><term>Photoluminescence</term><term>Pi electron</term><term>Sandwich structures</term><term>Space-charge-limited conduction</term><term>Thin films</term><term>Tin additions</term><term>Traps</term><term>Ultraviolet spectra</term><term>Yellow light</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Caractéristique électrique</term><term>Propriété optoélectronique</term><term>Electron pi</term><term>Caractéristique optique</term><term>Propriété optique</term><term>Spectre absorption</term><term>Spectre UV</term><term>Photoluminescence</term><term>Bande interdite</term><term>Lumière verte</term><term>Lumière jaune</term><term>Diode</term><term>Structure sandwich</term><term>Addition étain</term><term>Couche ITO</term><term>Propriété électrique</term><term>Caractéristique courant tension</term><term>Basse tension</term><term>Conduction limitée charge espace</term><term>Loi exponentielle</term><term>Piège</term><term>Couche mince</term><term>Anthracène</term><term>Ether polymère</term><term>Polymère conjugué</term><term>Dérivé de l'anthracène</term><term>Composé du fluor</term><term>Oxyde d'indium</term><term>Aluminium</term><term>Matériau dopé</term><term>7867</term><term>7840R</term><term>8235C</term><term>8105L</term><term>ITO</term><term>Modèle Cole Cole</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Aluminium</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Two new anthracene derivatives were characterized to improve the optoelectronic properties of π-conjugated anthracene polymers. The optical properties of the polymers were investigated by UV-visible absorption and photoluminescence (PL) spectroscopy. The energy bandgaps of anthracene-based polyether thin films were in the range 2.8-2.97 eV. Green emission (504 nm) was observed for anthracene/bisphenol A (An-BPA) and green-yellow emission (563 nm) for anthracene/fluorinated bisphenol A. (An-BPAF) Organic diodes formed by sandwiching anthracene layers between indium-tin oxide (ITO) and aluminum contacts were characterized. The dc electrical properties of ITO/anthracene derivatives/Al diodes were studied using current-voltage measurements and showed ohmic behavior at low voltage. The conduction mechanism seems to be a space-charge-limited current with exponential trap distribution at high applied bias voltage. The ac electrical transport of the anthracene derivatives was studied as a function of frequency (100 Hz-10 MHz) and applied bias in impedance spectroscopy analyses. We interpreted Cole-Cole plots in terms of the equivalent circuit model as a single parallel resistance and a capacitance network in series with a relatively small resistance. The evolution of the electrical parameters deduced from fitting of the experimental data is discussed. The conduction mechanism revealed by I-V characteristics is in agreement with the impedance spectroscopy results.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1369-8001</s0></fA01><fA03 i2="1"><s0>Mater. sci. semicond. process.</s0></fA03><fA05><s2>16</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Optical and electrical characterization of thin films based on anthracene polyether polymers</s1></fA08><fA11 i1="01" i2="1"><s1>HRICHI (Haikel)</s1></fA11><fA11 i1="02" i2="1"><s1>HRIZ (Khaled)</s1></fA11><fA11 i1="03" i2="1"><s1>BENZARTI-GHÉDIRA (Maha)</s1></fA11><fA11 i1="04" i2="1"><s1>JABALLAH (Nejmeddine)</s1></fA11><fA11 i1="05" i2="1"><s1>BEN CHAÂBANE (Ben)</s1></fA11><fA11 i1="06" i2="1"><s1>MAJDOUB (Mustapha)</s1></fA11><fA11 i1="07" i2="1"><s1>BEN OUADA (Hafedh)</s1></fA11><fA14 i1="01"><s1>Laboratoire d'Interfaces et Matériaux Avancés (LIMA), Faculté des Sciences de Monastir, Bd de l'environnement</s1><s2>5019 Monastir</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA20><s1>851-858</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>2888A</s2><s5>354000173387330430</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>49 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0188207</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Materials science in semiconductor processing</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Two new anthracene derivatives were characterized to improve the optoelectronic properties of π-conjugated anthracene polymers. The optical properties of the polymers were investigated by UV-visible absorption and photoluminescence (PL) spectroscopy. The energy bandgaps of anthracene-based polyether thin films were in the range 2.8-2.97 eV. Green emission (504 nm) was observed for anthracene/bisphenol A (An-BPA) and green-yellow emission (563 nm) for anthracene/fluorinated bisphenol A. (An-BPAF) Organic diodes formed by sandwiching anthracene layers between indium-tin oxide (ITO) and aluminum contacts were characterized. The dc electrical properties of ITO/anthracene derivatives/Al diodes were studied using current-voltage measurements and showed ohmic behavior at low voltage. The conduction mechanism seems to be a space-charge-limited current with exponential trap distribution at high applied bias voltage. The ac electrical transport of the anthracene derivatives was studied as a function of frequency (100 Hz-10 MHz) and applied bias in impedance spectroscopy analyses. We interpreted Cole-Cole plots in terms of the equivalent circuit model as a single parallel resistance and a capacitance network in series with a relatively small resistance. The evolution of the electrical parameters deduced from fitting of the experimental data is discussed. The conduction mechanism revealed by I-V characteristics is in agreement with the impedance spectroscopy results.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H20C</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H55</s0></fC02><fC02 i1="03" i2="X"><s0>001D03F03</s0></fC02><fC02 i1="04" i2="X"><s0>001D03F02</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Caractéristique électrique</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Electrical characteristic</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Característica eléctrica</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Propriété optoélectronique</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Optoelectronic properties</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Propiedad optoelectrónica</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Electron pi</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Pi electron</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Electrón 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i1="22" i2="3" l="ENG"><s0>Thin films</s0><s5>22</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Anthracène</s0><s2>NK</s2><s5>23</s5></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Anthracene</s0><s2>NK</s2><s5>23</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>Ether polymère</s0><s2>NK</s2><s5>24</s5></fC03><fC03 i1="24" i2="X" l="ENG"><s0>Ether polymer</s0><s2>NK</s2><s5>24</s5></fC03><fC03 i1="24" i2="X" l="SPA"><s0>Eter polímero</s0><s2>NK</s2><s5>24</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>Polymère conjugué</s0><s5>25</s5></fC03><fC03 i1="25" i2="X" l="ENG"><s0>Conjugated polymer</s0><s5>25</s5></fC03><fC03 i1="25" i2="X" l="SPA"><s0>Polímero conjugado</s0><s5>25</s5></fC03><fC03 i1="26" i2="X" l="FRE"><s0>Dérivé de l'anthracène</s0><s5>26</s5></fC03><fC03 i1="26" i2="X" l="ENG"><s0>Anthracene derivatives</s0><s5>26</s5></fC03><fC03 i1="26" i2="X" l="SPA"><s0>Antraceno derivado</s0><s5>26</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>Composé du fluor</s0><s5>27</s5></fC03><fC03 i1="27" i2="3" l="ENG"><s0>Fluorine compounds</s0><s5>27</s5></fC03><fC03 i1="28" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>28</s5></fC03><fC03 i1="28" i2="X" l="ENG"><s0>Indium oxide</s0><s5>28</s5></fC03><fC03 i1="28" i2="X" l="SPA"><s0>Indio óxido</s0><s5>28</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>Aluminium</s0><s2>NC</s2><s5>29</s5></fC03><fC03 i1="29" i2="3" l="ENG"><s0>Aluminium</s0><s2>NC</s2><s5>29</s5></fC03><fC03 i1="30" i2="3" l="FRE"><s0>Matériau dopé</s0><s5>46</s5></fC03><fC03 i1="30" i2="3" l="ENG"><s0>Doped materials</s0><s5>46</s5></fC03><fC03 i1="31" i2="3" l="FRE"><s0>7867</s0><s4>INC</s4><s5>56</s5></fC03><fC03 i1="32" i2="3" l="FRE"><s0>7840R</s0><s4>INC</s4><s5>57</s5></fC03><fC03 i1="33" i2="3" l="FRE"><s0>8235C</s0><s4>INC</s4><s5>58</s5></fC03><fC03 i1="34" i2="3" l="FRE"><s0>8105L</s0><s4>INC</s4><s5>59</s5></fC03><fC03 i1="35" i2="3" l="FRE"><s0>ITO</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="36" i2="3" l="FRE"><s0>Modèle Cole Cole</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="36" i2="3" l="ENG"><s0>Cole Cole model</s0><s4>CD</s4><s5>96</s5></fC03><fN21><s1>168</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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